DatasheetsPDF.com

P1006BK

UNIKC
Part Number P1006BK
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description P1006BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 43A PDFN 5X6P A...
Datasheet PDF File P1006BK PDF File

P1006BK
P1006BK

Overview
P1006BK N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 43A PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Pulsed Drain Current1 Tc = 25 °C Tc = 100 °C ID IDM 43 27 120 Continuous Drain Current TA = 25 °C TA= 70 °C ID 10 8 Avalanche Current IAS 38 Avalanche Energy L =0.
1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 41 16 Power Dissipation TA = 25 °C TA = 70 °C PD 2.
1 1.
4 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 58 Junction-to-Case RqJC 3 1Pulse width limited by maximum junction temperature.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a stil...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)