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P1006BI

UNIKC
Part Number P1006BI
Manufacturer UNIKC
Description N-Channel MOSFET
Published May 14, 2020
Detailed Description P1006BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 66A TO-251 ABSO...
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P1006BI
P1006BI

Overview
P1006BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 66A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 66 42 150 Avalanche Current IAS 38.
5 Avalanche Energy L = 0.
1mH EAS 74 Power Dissipation TC = 25 °C TC = 100 °C PD 96 38 Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
SYMBOL RqJC RqJA TYPICAL MAXIMUM 1.
3 62.
5 UNITS °C / W REV 1.
0 1 2017/2/16 P1006BI N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 60 1.
3 1.
8 2.
3 ±100 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V VDS = 40V, VGS = 0V , TJ = 125 °C 1 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 4.
5V, ID = 20A VGS = 10V, ID = 20A VDS = 10V, ID = 20A 8.
1 13 6.
8 10 60 DYNAMIC Input Capacitance Ciss 1920 Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 215 Reverse Transfer Capacitance Crss 140 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 0.
7 Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Qg(VGS=10V) Qg(VGS=4.
5V) Qgs Qgd td(on) tr td(off) tf VDS = 30V , ID = 20A VDS = 30V ,ID @ 20A, VGS = 10V, RGEN = 6Ω 42 23 6 12 29 31 51 31 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current3 IS Forward Voltage...


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