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P1006BT

UNIKC
Part Number P1006BT
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 7, 2017
Detailed Description P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 61A TO-220 ABSO...
Datasheet PDF File P1006BT PDF File

P1006BT
P1006BT

Overview
P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 10mΩ @VGS = 10V ID 61A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 61 39 150 Avalanche Current IAS 39 Avalanche Energy L = 0.
1 mH EAS 77 Power Dissipation TC= 25 °C TC= 100°C PD 83 33 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction temperature.
2Package limitation current is 30A.
SYMBOL RqJA RqJC TYPICAL MAXIMUM 62.
5 1.
5 UNITS °C / W REV 1.
1 1 2014/10/30 P1006BT N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP M...


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