Part Number
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WFN1N60NC |
Manufacturer
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Winsemi |
Description
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Silicon N-Channel MOSFET |
Published
|
Mar 22, 2017 |
Detailed Description
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WFN1N60NC
Silicon N-Channel MOSFET
Features
■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC)...
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Datasheet
|
WFN1N60NC
|
Overview
WFN1N60NC
Silicon N-Channel MOSFET
Features
■0.
5A,600V,RDS(on)(Max15.
0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.
1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃...
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