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WFN1N60N

Winsemi
Part Number WFN1N60N
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Apr 25, 2012
Detailed Description Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr N1N6 0N WF WFN 1N60 Silicon N-Ch annel MOS FET Cha OSF...
Datasheet PDF File WFN1N60N PDF File

WFN1N60N
WFN1N60N

Overview
Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr N1N6 0N WF WFN 1N60 Silicon N-Ch annel MOS FET Cha OSF Features ■0.
5A,600V,RDS(on)(Max15.
0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.
1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100℃) IDM V GS EAS E AR dv/dt PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature 0.
025 -55~150 300 W/℃ ℃ ℃ Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode ...


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