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WFN1N60C

Part Number	WFN1N60C
Manufacturer	Winsemi
Description	Power MOSFET
Published	Mar 27, 2017
Detailed Description	Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%...
Datasheet	WFN1N60C PDF File

Overview

Features � 1.
2A,600V, RDS(on)(Max8.
5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.
1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) WFN1N60C Silicon N-Channel MOSFET General Description Th is Power MO SFET is produced using Winse mi’s advan ced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol Parameter VDSS ID Drain Source Voltage Continuous Drain Current(@...

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