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WFN1N60NC

Winsemi
Part Number WFN1N60NC
Manufacturer Winsemi
Description Silicon N-Channel MOSFET
Published Mar 22, 2017
Detailed Description WFN1N60NC Silicon N-Channel MOSFET Features ■0.5A,600V,RDS(on)(Max15.0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.1nC)...
Datasheet PDF File WFN1N60NC PDF File

WFN1N60NC
WFN1N60NC

Overview
WFN1N60NC Silicon N-Channel MOSFET Features ■0.
5A,600V,RDS(on)(Max15.
0Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 6.
1nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supply.
electronic Lamp ballasts based on half bridge and UPS.
Absolute Maximum Ratings Symbol Parameter VDSS Drain Source Voltage Continuous Drain Current(@Tc=25℃...


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