SEMICONDUCTOR
TECHNICAL DATA
MJD117/L
EPITAXIAL PLANAR
PNP TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES High DC Current Gain.
: hFE=1000(Min.
), VCE=-4V, IC=-1A.
Low Collector-Emitter Saturation Voltage.
Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current
DC
Collector Power Dissipation
Ta=25 Tc=25
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO
IC
IB
PC
Tj Tstg
RATING -100 -100 -5 -2 -4 -50 1.
0 20 150
-55 150
UNIT V V V
A
mA
W
C B
Q
A C
H ...