AOP605 Complementary Enhancement Mode Field Effect
Transistor
General Description
The AOP605/L uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
AOP605 and AOP605L are electrically identical.
-RoHS Compliant -AOP605L is Halogen Free
Features
n-channel VDS (V) = 30V ID = 7.
5A (VGS = 10V)
p-channel -30V -6.
6A (VGS = -10V)
RDS(ON)
28mΩ (VGS = 10V) 35mΩ (VGS = -10V)
43mΩ (VGS = 4.
5V) 58mΩ (VGS = -4.
5V)
PDIP8
Top View
Bottom View
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
PDIP-8
D2
G2 S2
n-channel
D1
G1 S1
p-channel
Absolute Maximum Ratings T A=25...