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AOP604

ETC
Part Number AOP604
Manufacturer ETC
Description MOSFET
Published Mar 26, 2005
Detailed Description March 2003 AOP604 Complementary Enhancement Mode Field Effect Transistor General Description The AOP604 uses advanced t...
Datasheet PDF File AOP604 PDF File

AOP604
AOP604

Overview
March 2003 AOP604 Complementary Enhancement Mode Field Effect Transistor General Description The AOP604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
A Schottky diode in parallel with the n-channel FET reduces body diode related losses.
Features n-channel p-channel VDS (V) = 30V -30V ID = 7.
5A -6.
6A RDS(ON) < 28m Ω < 35m Ω (VGS = 10V) < 43m Ω < 58m Ω (VGS = 4.
5V) Schottky VDS=30V, I F=3A, VF<0.
5V@1A PDIP-8 S1/A G1 S2 G2 1 2 3 4 8 7 6 5 D1/K D1/K D2 D2 D2 D1 K N-ch P-ch G2 S2 G1 S1 A Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±20 -6.
6 -5.
3 -30 2.
5 1.
6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG Symbol VDS TA=25°C ID IDM PD TJ, TSTG 7.
5 6 30 2.
5 1.
6 -55 to 150 W °C Units V A Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current A Maximum Schottky 30 4 2.
7 20 2.
5 1.
6 -55 to 150 TA=70°C Pulsed Forward Current B TA=25°C Power Dissipation A TA=70°C W °C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd.
AOP604 Thermal Characteristics: n-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Thermal Characteristics: p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Thermal Characteristics: Schottky Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol RθJA RθJL Typ 40 67 33 Max 50 80 40 Units °C/W °C/W °C/W Symbol RθJA RθJL Typ 38 66 30 Max 50 80 40 Units °C/W °C/W °C/W Symbol t ≤ 10s Steady-State Steady-State RθJA...


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