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AOP601

Alpha & Omega Semiconductors
Part Number AOP601
Manufacturer Alpha & Omega Semiconductors
Description MOSFET
Published Feb 18, 2010
Detailed Description www.DataSheet4U.com AOP601 Complementary Enhancement Mode Field Effect Transistor General Description The AOP601 uses a...
Datasheet PDF File AOP601 PDF File

AOP601
AOP601

Overview
www.
DataSheet4U.
com AOP601 Complementary Enhancement Mode Field Effect Transistor General Description The AOP601 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
A Schottky diode in parallel with the n-channel FET reduces body diode related losses.
Standard Product AOP601 is Pb-free (meets ROHS & Sony 259 specifications).
AOP601L is a Green Product ordering option.
AOP601 and AOP601L are electrically identical.
Features n-channel p-channel -30V VDS (V) = 30V ID = 7.
5A (VGS = 10V) -6.
6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS = -4.
5V) Schottky VDS=30V, I F=3A, VF<0.
5V@1A PDIP-8 S2 G2 S1/A G1 1 2 3 4 8 7 6 5 D2 D2 D1/K D1/K D2 D1 K P-ch N-ch G2 S2 G1 S1 A Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 ±20 -6.
6 -5.
3 -30 2.
5 1.
6 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG Symbol VDS TA=25°C ID IDM PD TJ, TSTG 7.
5 6 30 2.
5 1.
6 -55 to 150 W °C Units V A Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward Current A Maximum Schottky 30 4 2.
7 20 2.
5 1.
6 -55 to 150 TA=70°C Pulsed Forward Current B TA=25°C Power Dissipation A TA=70°C W °C Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd.
AOP601 www.
DataSheet4U.
com Thermal Characteristics: n-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Thermal Characteristics: p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Thermal Characteristics: Schottky Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A ...


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