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BUZ325

Part Number BUZ325
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet BUZ325





Overview
BUZ 325 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 325 VDS 400 V ID 12.
5 A RDS(on) 0.
35 Ω Package TO-218 AA Ordering Code C67078-S3118-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12.
5 Unit A ID IDpuls 50 TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12.
5 13 mJ ID = 12.
5 A, VDD = 50 V, RGS = 25 Ω L = 7.
5 mH, Tj = 25 °C Gate source voltage Power dissipation 670 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Ther...






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