DatasheetsPDF.com

BUZ30AH

Infineon
Part Number BUZ30AH
Manufacturer Infineon
Description Power Transistor
Published Apr 6, 2016
Detailed Description SIPMOS ® Power Transistor BUZ 30A H • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC6...
Datasheet PDF File BUZ30AH PDF File

BUZ30AH
BUZ30AH

Overview
SIPMOS ® Power Transistor BUZ 30A H • N channel • Enhancement mode • Avalanche-rated .
Halogen-free according to IEC61249-2--21 Pin 1 G Pin 2 D Pin 3 S Type BUZ 30A H VDS 200 V ID 21 A RDS(on) 0.
13 Ω Maximum Ratings Parameter Continuous drain current TC = 26 ˚C Pulsed drain current TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 21 A, VDD = 50 V, RGS = 25 Ω L = 1.
53 mH, Tj = 25 ˚C Gate source voltage Power dissipation TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Package PG-TO-220-3 Pb-free Yes Symbol ID IDpuls IAR EAR EAS VGS Ptot Tj Tstg RthJC RthJA Values 21 84 21 12 Unit A mJ 450 ± 20 125 -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤1 75 E 55 / 150 / 56 V W ˚C K/W Rev.
2.
5 Page 1 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.
25 mA, Tj = 25 ˚C Gate threshold voltage VGS=VDS, ID = 1 mA Zero gate voltage drain current VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 10 V, ID = 13.
5 A Symbol min.
Values typ.
max.
V(BR)DSS 200 VGS(th) 2.
1 IDSS - - IGSS - RDS(on) - 3 0.
1 10 10 0.
1 4 1 100 100 0.
13 Unit V µA nA Ω Rev.
2.
5 Page 2 2010-07-02 BUZ 30A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 13.
5 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω Rise time VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)