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BUZ30A

Infineon Technologies AG
Part Number BUZ30A
Manufacturer Infineon Technologies AG
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 30A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type...
Datasheet PDF File BUZ30A PDF File

BUZ30A
BUZ30A

Overview
BUZ 30A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 30A 200 V 21 A 0.
13 Ω TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID 21 A TC = 26 ˚C Pulsed drain current IDpuls 84 TC = 25 ˚C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 21 12 mJ ID = 21 A, VDD = 50 V, RGS = 25 Ω L = 1.
53 mH, Tj = 25 ˚C Gate source voltage Power dissipation 450 VGS Ptot ± 20 125 V W TC = 25 ˚C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 .
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+ 150 -55 .
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+ 150 ˚C ≤1 75 E 55 / 150 / 56 K/W Data Sheet 1 06.
99 BUZ 30A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min.
Values typ.
max.
Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.
25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.
1 3 4 µA 0.
1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, Tj = 25 ˚C VDS = 200 V, VGS = 0 V, Tj = 125 ˚C Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) 0.
1 0.
13 Ω VGS = 10 V, ID = 13.
5 A Data Sheet 2 06.
99 BUZ 30A Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Values typ.
max.
Unit Transconductance gfs 6 15 - S VDS≥ 2 * ID * RDS(on)max, ID = 13.
5 A Input capacitance Ciss 1400 1900 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance Coss 280 400 VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss 130 200 ns VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RG...


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