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BUZ305

Siemens Semiconductor Group
Part Number BUZ305
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 305 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet PDF File BUZ305 PDF File

BUZ305
BUZ305

Overview
BUZ 305 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 305 VDS 800 V ID 7.
5 A RDS(on) 1Ω Package TO-218 AA Ordering Code C67078-S3134-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 7.
5 Unit A ID IDpuls 30 TC = 31 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 7.
5 16 mJ ID = 7.
5 A, VDD = 50 V, RGS = 25 Ω L = 27.
7 mH, Tj = 25 °C Gate source voltage Power dissipation 830 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 0.
83 75 E 55 / 150 / 56 °C K/W 1 01/97 BUZ 305 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 800 3 0.
1 10 10 0.
85 4 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.
1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 1 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 5 A Semiconductor Group 2 01/97 BUZ 305 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 2.
5 7.
5 2000 220 130 - S pF 2650 330 200 ns 30 45 VDS≥ 2 * ID * RDS(on)max, ID = 5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 2.
7 ...


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