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BUZ308

Siemens Semiconductor Group
Part Number BUZ308
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 308 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet PDF File BUZ308 PDF File

BUZ308
BUZ308

Overview
BUZ 308 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 308 VDS 800 V ID 2.
6 A RDS(on) 4Ω Package TO-218 AA Ordering Code C67078-S3109-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 2.
6 Unit A ID IDpuls 10 TC = 50 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3 8 mJ ID = 3 A, VDD = 50 V, RGS = 25 Ω L = 66.
6 mH, Tj = 25 °C Gate source voltage Power dissipation 320 VGS Ptot ± 20 75 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 .
.
.
+ 150 -55 .
.
.
+ 150 ≤ 1.
67 75 E 55 / 150 / 56 °C K/W Semiconductor Group 09/96 BUZ 308 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Static Characteristics Drain- source breakdown voltage Values typ.
max.
Unit V(BR)DSS 800 3 0.
1 10 10 3.
5 4 V VGS = 0 V, ID = 0.
25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.
1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 4 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 1.
5 A Semiconductor Group 2 09/96 BUZ 308 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min.
Dynamic Characteristics Transconductance Values typ.
max.
Unit gfs 1 1.
8 1400 85 30 - S pF 1860 130 45 ns 20 30 VDS≥ 2 * ID * RDS(on)max, ID = 1.
5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50...


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