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BUZ331

Part Number BUZ331
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 331 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet BUZ331




Overview
BUZ 331 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 331 VDS 500 V ID 8A RDS(on) 0.
8 Ω Package TO-218 AA Ordering Code C67078-S3114-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 8 Unit A ID IDpuls 32 TC = 35 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 8 13 mJ ID = 8 A, VDD = 50 V, RGS = 25 Ω L = 16 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance,...






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