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BUZ358

Part Number BUZ358
Manufacturer Siemens Semiconductor Group
Description Power Transistor
Published Mar 23, 2005
Detailed Description BUZ 358 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BU...
Datasheet BUZ358




Overview
BUZ 358 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 358 VDS 1000 V ID 4.
5 A RDS(on) 2.
6 Ω Package TO-218 AA Ordering Code C67078-S3111-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4.
5 Unit A ID IDpuls 18 TC = 25 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 5.
1 18 mJ ID = 5.
1 A, VDD = 50 V, RGS = 25 Ω L = 62 mH, Tj = 25 °C Gate source voltage Power dissipation 850 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal r...






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