DISCRETE SEMICONDUCTORS
DATA SHEET
BST120 P-channel enhancement mode vertical D-MOS
transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
P-channel enhancement mode vertical D-MOS
transistor
DESCRIPTION P-channel vertical D-MOS
transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.
FEATURES • Very low RDS(on) • Direct interface to C-MOS • High-speed switching • No second breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance −ID ...