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BST16

Zetex Semiconductors
Part Number BST16
Manufacturer Zetex Semiconductors
Description PNP TRANSISTOR
Published Mar 23, 2005
Detailed Description SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C...
Datasheet PDF File BST16 PDF File

BST16
BST16

Overview
SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – BST39 BT2 7 BST16 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -350 -300 -4 -1 -500 1 -65 to +150 UNIT V V V A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CEO MIN.
-350 -300 -4 -1 -50 -20 - 2.
0 -0.
5 30 15 15 150 MHz pF TYP.
MAX.
UNIT V V V µA µA µA V V CONDITIONS.
I C=-100 µ A I C=-1mA I E=-100 µ A V CB=-280V V CB=-250V V EB=-4V I C=-50mA, I B=-5mA* I C=-30mA, I B=-3mA* I C=-50mA, V CE=-10V* I C=-10mA, V CE=-10V* f = 30MHz V CB=-10V, f=1MHz Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage V CE(sat) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance fT C obo *Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤2% For typical characteristics graphs see FMMTA92 datasheet.
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