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BST15

Zetex Semiconductors
Part Number BST15
Manufacturer Zetex Semiconductors
Description SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
Published Jun 24, 2007
Detailed Description www.DataSheet4U.com SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low...
Datasheet PDF File BST15 PDF File

BST15
BST15

Overview
www.
DataSheet4U.
com SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage COMPLEMENTARY TYPE – PARTMARKING DETAIL – BST40 BT1 7 BST15 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb =25°C Operating and Storage Temperature Range SYMBOL VCBO V CEO V EBO I CM IC P tot T j:T stg VALUE -200 -200 -4 -1 -500 1 -65 to +150 UNIT V V V A mA W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I CEO MIN.
-200 -200 -4 -1 -50 -20 - 2.
0 -0.
5 30 15 15 150 MHz pF TYP.
MAX.
UNIT V V V µA µA µA V V CONDITIONS.
I C=-100 µ A I C=-1mA I E=-100 µ A V CB=-175V V CB=-150V V EB=-4V I C=-50mA, I B=-5mA* I C=-30mA, I B=-3mA* I C=-50mA, V CE=-10V* I C=-10mA, V CE=-10V* f = 30MHz V CB=-10V, f=1MHz Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage V CE(sat) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance fT C obo *Measured under pulsed conditions.
Pulse width=300µs.
Duty cycle ≤2% For typical characteristics graphs see FMMTA92 datasheet.
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