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Part Number
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SSM3J353F |
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Manufacturer
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Toshiba Semiconductor |
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Description
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Silicon P-Channel MOSFET |
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Published
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Mar 21, 2018 |
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Detailed Description
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MOSFETs Silicon P-Channel MOS (U-MOS)
SSM3J353F
1. Applications
• Power Management Switches
2. Features
(1) 4.0 V gate ...
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Datasheet
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SSM3J353F
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Overview
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM3J353F
1.
Applications
• Power Management Switches
2.
Features
(1) 4.
0 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 274 mΩ (max) (@VGS = -4.
0 V, ID = -0.
5 A) RDS(ON) = 232 mΩ (max) (@VGS = -4.
5 V, ID = -0.
5 A) RDS(ON) = 150 mΩ (max) (@VGS = -10 V, ID = -2.
0 A)
3.
Packaging and Pin Assignment
S-Mini
SSM3J353F
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
1
Start of commercial production
2016-02
2016-12-19 Rev.
2.
0
SSM3J353F
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -30 V
Gate-source voltage
VGSS
-25 / +20
Drain cu...
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