Epitaxial Planar
PNP Transistor
FEATURES
High DC Current Gain.
Built-in a Damper Diode at E-C.
Pb
Lead-free
Lead Formed for Surface Mount Applications.
Straight Lead.
Complement to MJD122.
Production specification
MJD127
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current
-8 A
ICP Collector Power Dissipation
-16 A
IB Base Current
-120
mA
PC Collector Power Dissipation
1.
5 W
Tj ,Tstg
Junction and Storage temperature range
-65 to +150
℃
V/(W)030 Rev.
A
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