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MJD3055

Part Number MJD3055
Manufacturer GME
Description Epitaxial Planar NPN Transistor
Published May 17, 2018
Detailed Description Epitaxial Planar NPN Transistor FEATURES  Lead formed for surface mount applications. Pb Lead-free  Straight lead....
Datasheet MJD3055




Overview
Epitaxial Planar NPN Transistor FEATURES  Lead formed for surface mount applications.
Pb Lead-free  Straight lead.
 Electrically similar to popular MJE3055T.
 DC current gain specified to 10A.
APPLICATIONS  Low speed switching applications.
 D-PAK for surface mount applications.
Production specification MJD3055 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5V IC Collector Current 10 A IB Base Current 6A PC Collector Power Dissipation 20 W Tj ,Tstg Junction and Storage temperature range ...






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