Part Number
|
BL10N30 |
Manufacturer
|
GME |
Description
|
N-Channel Power Mosfet |
Published
|
May 18, 2018 |
Detailed Description
|
Production specification
N-Channel Power MOSFET
BL10N30
FEATURES
High switching speed. RDS(ON)=0.65Ω @ VGS=10V. ...
|
Datasheet
|
BL10N30
|
Overview
Production specification
N-Channel Power MOSFET
BL10N30
FEATURES
High switching speed.
RDS(ON)=0.
65Ω @ VGS=10V.
100% avalanche tested.
Very Good Manufacturing Reliabilty.
Pb
Lead-free
APPLICATIONS
N-Channel Power MOSFET.
Switching Applications.
TO-220AB
MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Symbol Parameter
Value
VDS Drain-Source Voltage
300
Unit V
VGS ID IDM PD EAS EAR PD RθJA RθJC Tj Tstg
Gate -Source Voltage
Drain Current Continuous at TC=25℃ Drain Current(pulsed)Note1
Power Dissipation at TC=25℃ Avalanche Energy(Single Pulsed (Note 2))
Avalanche Energy (Repetitive(Note 3))
Power Dissipation
TC=25℃ Derate above 25°C
Thermal Resistance,Juncti...
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