Production specification
N-Channel Enhancement Mode Field Effect
Transistor BL10N65
FEATURES
Extremely High dv/dt Capability.
100% AvalancheTtested.
Gate Charge Minimized.
Very Good Manufacturing Reliabilty.
Pb
Lead-free
APPLICATIONS
N-channel Enhancement mode Effect
Transistor.
Switching Applications.
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VDS Drain-Source Voltage
600 V
VGS Gate -Source Voltage
ID
Maximum Drain Current(continuous) at TC=25℃ TC=100℃
IDM Drain Current(pulsed)Note1
PD Power Dissipation at TC=25℃
Vesd(G-S) G-S ESD (HBM C=100pF,R=1.
5kΩ)
Single Pulse Avalanche Energy EAS (sta...