BCV26
Discrete POWER & Signal Technologies
BCV26
C
E
SOT-23
Mark: FD
B
PNP Darlington
Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA.
Sourced from Process 61.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
30 40 10 1.
2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junc...