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BCV27

Fairchild Semiconductor
Part Number BCV27
Manufacturer Fairchild Semiconductor
Description NPN Darlington Transistor
Published Mar 23, 2005
Detailed Description BCV27 Discrete POWER & Signal Technologies BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is de...
Datasheet PDF File BCV27 PDF File

BCV27
BCV27

Overview
BCV27 Discrete POWER & Signal Technologies BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.
0 A.
Sourced from Process 05.
Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 30 40 10 1.
2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max *BCV27 350 2.
8 357 Units mW mW/ °C °C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.
5 mm.
©1997 Fairchild Semiconductor Corporation BCV27 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 10 mA, IB = 0 IC = 10 µA, I E = 0 IE = 100 nA, IC = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 30 40 10 0.
1 0.
1 V V V µA µA ON CHARACTERISTICS hFE DC Current Gain IC = 1.
0 mA, VCE = 5.
0 V IC = 10 mA, VCE = 5.
0 V IC = 100 mA, VCE = 5.
0 V IC = 100 mA, I B = 0.
1 mA IC = 100 mA, I B = 0.
1 mA 4,000 10,000 20,000 1.
0 1.
5 V V VCE( sat) VBE( sat ) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTI...


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