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BCV27

NXP
Part Number BCV27
Manufacturer NXP
Description NPN Darlington transistors
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV27; BCV47 NPN Darlington transistors Product specification S...
Datasheet PDF File BCV27 PDF File

BCV27
BCV27

Overview
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV27; BCV47 NPN Darlington transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors FEATURES • Medium current (max.
500 mA) • Low voltage (max.
60 V) • High DC current gain (min.
20000).
APPLICATIONS • Preamplifier input applications.
DESCRIPTION NPN Darlington transistor in a SOT23 plastic package.
PNP complements: BCV26 and BCV46.
MARKING 1 2 BCV27; BCV47 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 3 TR1 TR2 2 MAM298 TYPE NUMBER BCV27 BCV47 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) FF∗ FG∗ Top view Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BCV27 BCV47 VCES collector-emitter voltage BCV27 BCV47 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage collector current (DC) peak collector current base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 60 10 500 800 100 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 40 80 V V MIN.
MAX.
UNIT 1999 Apr 08 2 Philips Semiconductors Product specification NPN Darlington transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO BCV27 BCV47 IEBO hFE emitter cut-off current DC current gain BCV27 PARAMETER collector cut-off current IE = 0; VCBO = 30 V IE = 0; VCBO = 60 V IE = 0; VEB = 10 V VCE = 5 V; (see Fig.
2) IC = 1 mA IC = 10 mA IC = 100 mA DC current gain BCV47 VCE = 5 V; (see Fig.
2) IC = 1 mA IC = 10 mA IC = 100 mA VCEsat VBEsat VBEon fT collec...


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