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BCV26

Part Number	BCV26
Manufacturer	NXP
Description	PNP Darlington transistors
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product speciﬁcation...
Datasheet	BCV26 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCV26; BCV46 PNP Darlington transistors Product speciﬁcation Supersedes data of 1997 Apr 23 1999 Apr 08 Philips Semiconductors Product speciﬁcation PNP Darlington transistors FEATURES • High current (max.
500 mA) • Low voltage (max.
60 V) • Very high DC current gain (min.
10000).
APPLICATIONS • Where very high amplification is required.
DESCRIPTION PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING 1 2 BCV26; BCV46 PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, halfpage 3 1 3 TR1 TR2 2 MAM299 TYPE NUMBER BCV26 BCV46 Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING CODE(1) FD∗ FE∗ Top view Fig.
1 Simplified outline (SOT23) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO BCV26 BCV46 VCES collector-emitter voltage BCV26 BCV46 VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 − − − − − − − −65 − −65 −30 −60 −10 −500 −800 −100 250 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −40 −80 V V MIN.
MAX.
UNIT 1999 Apr 08 2 Philips Semiconductors Product speciﬁcation PNP Darlington transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 BCV26; BCV46 VALUE 500 UNIT K/W CHARACTERISTICS Tamb = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO BCV26 BCV46 IEBO hFE emitter cut-off current DC current gain BCV26 BCV46 DC current gain BCV26 BCV46 DC current gain BCV26 BCV46 VCEsat VBEsat VBEon fT collector-emitter saturation voltage IC...

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