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BCV26

Infineon Technologies AG
Part Number BCV26
Manufacturer Infineon Technologies AG
Description PNP Silicon Darlington Transistors
Published Mar 23, 2005
Detailed Description BCV26, BCV46 PNP Silicon Darlington Transistors  For general AF applications  High collector current  High current ga...
Datasheet PDF File BCV26 PDF File

BCV26
BCV26

Overview
BCV26, BCV46 PNP Silicon Darlington Transistors  For general AF applications  High collector current  High current gain  Complementary types: BCV27, BCV47 (NPN) 3 2 1 VPS05161 Type BCV26 BCV46 Maximum Ratings Parameter Marking FDs FEs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SOT23 SOT23 Symbol VCEO VCBO VEBO BCV26 30 40 10 BCV46 60 80 10 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg 500 800 100 200 360 150 -65 .
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150 mA mW °C Thermal Resistance Junction - soldering point1) RthJS 210 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-13-2001 BCV26, BCV46 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, VCE = 5 V DC current gain 1) IC = 0.
5 A, VCE = 5 V BCV26 BCV46 BCV26 BCV46 hFE 4000 2000 BCV26 BCV46 hFE 20000 10000 BCV26 BCV46 hFE 10000 4000 hFE 4000 2000 BCV26 BCV46 IEBO BCV26 BCV46 ICBO 10 10 100 ICBO 100 100 BCV26 BCV46 V(BR)EBO BCV26 BCV46 V(BR)CBO 40 80 10 V(BR)CEO 30 60 typ.
max.
Unit V nA µA nA - 1) Pulse test: t ≤ 300µs, D = 2% 2 Jul-13-2001 BCV26, BCV46 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol Values Parameter min.
DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.
1 mA Base-emi...


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