2SK2330(L), 2SK2330(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • No secondary breakdown • Suitable for Switching
regulator, DC-DC converter
Outline
HDPAK
4
4
1 2 3
D1 2 3
G
1.
Gate 2.
Drain 3.
Source S 4.
Drain
November 1996
2SK2330(L), 2SK2330(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 %
2.
Value at Tc = 25 °C
Symbol VDSS VGSS ID I *1
D(pulse)
IDR Pch*2 Tch Tstg
Ratings 500 ±30 15 60 15 1...