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2SK2318

Sanyo Semicon Device
Part Number 2SK2318
Manufacturer Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Published Mar 30, 2005
Detailed Description Ordering number:ENN5106 Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. N-Channel Silicon MOSF...
Datasheet PDF File 2SK2318 PDF File

2SK2318
2SK2318

Overview
Ordering number:ENN5106 Features · Low ON resistance.
· Ultrahigh-speed switching.
· 2.
5V drive.
N-Channel Silicon MOSFET 2SK2318 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2083B 6.
5 5.
0 4 [2SK2318] 2.
3 0.
5 5.
5 1.
5 7.
0 0.
85 0.
7 1.
2 0.
8 1.
6 7.
5 0.
6 12 3 0.
5 unit:mm 2092B 2.
3 6.
5 5.
0 4 2.
3 [2SK2318] 2.
3 0.
5 1 : Gate 2 : Drain 3 : Source SANYO : TP 0.
8 5.
5 1.
5 2.
5 7.
0 1.
2 0.
85 1 0.
6 2 3 0.
5 1.
2 0 to 0.
2 2.
3 2.
3 1 : Gate 2 : Drain 3 : Source SANYO : TP-FA Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.
,Ltd.
Semiconductor Company TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73099TH (KT)/42895YK (KOTO) TA-0077 No.
5106–1/4 2SK2318 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Electrical Characteristics at Ta = 25˚C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-Stat...


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