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2SK2315

Hitachi Semiconductor
Part Number 2SK2315
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High spe...
Datasheet PDF File 2SK2315 PDF File

2SK2315
2SK2315

Overview
2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.
5 V gate drive device can be driven from 3 V source.
Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
When using the alumina ceramic board (12.
5 × 20 × 0.
7mm) 3.
Marking is “TY” Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 60 ±20 — — 0.
5 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Note 1.
Pulse Test |yfs| Ciss Coss Crss t on t off 1.
5 — — — — — Typ — — — — — 0.
4 0.
35 1.
8 173 85 23 21 85 Max — — ±5 5 1.
5 0.
6 0.
45 — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.
3 A VGS = 3 V*1 ID = 1 A VGS = 4 V*1 ID = 1 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 1 A, RL = 30 Ω VGS = 10 V Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 2 2SK2315 Power vs.
Temperature Derating 1.
6 Channel Dissipation Pch** (W) (** on the almina ceramic board) 5 100 µs 2 Maximum Safe Operation Area 1 I D (A) PW 1.
2 1 0.
5 = m s 10 m s C D Drain Current 0.
8 0.
2 0.
1 0.
05 0.
02 0.
01 Operation in this area is limited by R DS(on) O n t io ra ...


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