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2SK2315

Renesas
Part Number 2SK2315
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Jan 8, 2022
Detailed Description 2SK2315 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed swit...
Datasheet PDF File 2SK2315 PDF File

2SK2315
2SK2315

Overview
2SK2315 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.
5 V gate drive device can be driven from 3 V source.
• Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 21 3 4 D G REJ03G1006-0200 (Previous: ADE-208-1354) Rev.
2.
00 Sep.
07,2005 1.
Gate 2.
Drain 3.
Source 4.
Drain Note: Marking is “TY” S *UPAK is a trademark of Renesas Technology Corp.
Rev.
2.
00 Sep.
07, 2005 page 1 of 5 2SK2315 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)*1 Body to drain diode reverse drain current Channel dissipation IDR Pch*2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
When using the alumina ceramic board (12.
5 × 20 × 0.
7mm) Ratings 60 ±20 2 4 2 1 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS — Zero gate voltage drain current IDSS — Gate to source cutoff voltage VGS(off) 0.
5 Static drain to source on state resistance RDS(on) — — Forward transfer admittance |yfs| 1.
5 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on time ton — Turn-off time toff — Note: 3.
Pulse Test Typ — — — — — 0.
4 0.
35 1.
8 173 85 23 21 85 Max — — ±5 5 1.
5 0.
6 0.
45 — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns (Ta = 25°C) Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 0.
3 A, VGS = 3 V*3 ID = 1 A, VGS = 4 V*3 ID = 1 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 1 A, RL = 30 Ω, VGS = 10 V Rev.
2.
00 Sep.
07, 2005 page 2 of 5 Channel Diss...


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