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2SK2311

Toshiba Semiconductor
Part Number 2SK2311
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK2311 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2311 Chopper Regulator, DC−DC Convert...
Datasheet PDF File 2SK2311 PDF File

2SK2311
2SK2311

Overview
2SK2311 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2311 Chopper Regulator, DC−DC Converter and Switching Regulator Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 36 mΩ (typ.
) z High forward transfer admittance : |Yfs| = 16 S (typ.
) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg 60 60 ±20 25 100 40 156 25 3.
5 150 −55 to 150 V V V A A W mJ A mJ °C °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.
5 g (typ.
) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 3.
125 83.
3 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.
5 g (typ.
) Note 2: VDD = 25 V, Tch = 25°C (initial), L = 339 μH, RG = 25 Ω, IAR = 25 A Note 3: Repetitive ra...


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