8342N (SILICON) 2N835
NPN silicon epitaxial
transistors for high- speed switching applications.
CASE 22 \
(TO·18) Collector connected to case
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage Emitter-Base Voltage
Collector Current-Continuous Peak
Total Device DisSipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 100°C
Derate above 100°C Operating and Storage Junction
Temperature Range
Symbol VCES VCB VEB
Ie
PD
PD
PD
TJ,Tstg
2N834 2N835
30 40 5.
0
200 0.
3 2.
0
20 25 3.
0
1.
0 6.
67
0.
5 6.
67
-65 to +175
Unit
Vdc Vdc Vdc mAdc Watt mwflC Watt mW/oC
Watt mWflC
°c
FIGURE 1 - TURN·ON AND TURN·OFF TIM...