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2N80Z

Unisonic Technologies
Part Number 2N80Z
Manufacturer Unisonic Technologies
Description 800V N-CHANNEL POWER MOSFET
Published Nov 6, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N...
Datasheet PDF File 2N80Z PDF File

2N80Z
2N80Z

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2N80Z Preliminary 2A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N80Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology.
This technology is specialized in allowing a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 2N80Z is universally applied in high efficiency switch mode power supply.
 FEATURES * RDS(on) < 6.
3Ω @ VGS=10V, ID=1.
2A * High switching speed  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N80ZL-TA3-T 2N80ZG-TA3-T 2N80ZL-TF3-T 2N80ZG-TF3-T 2N80ZL-TF1-T 2N80ZG-TF1-T 2N80ZL-TF2-T 2N80ZG-TF2-T 2N80ZL-TM3-R 2N80ZG-TM3-R 2N80ZL-TN3-R 2N80ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F2 TO-220F TO-251 TO-252 Pin Assignment 123 GD S GD S GD S GD S GD S GD S Packing Tube Tube Tube Tube Tape Reel Tape Reel www.
unisonic.
com.
tw Copyright © 2015 Unisonic Technologies Co.
, Ltd 1 of 7 QW-R502-828.
B 2N80Z  MARKING Preliminary Power MOSFET UNISONIC TECHNOLOGIES CO.
, LTD www.
unisonic.
com.
tw 2 of 7 QW-R502-282.
B 2N80Z Preliminary Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage Avalanche Current (Note 2) VGSS ±20 V IAR 2.
4 A Drain Current Continuous Pulsed (Note 2) ID IDM 2.
4 A 9.
6 A Avalanche Energy Single Pulsed (Note 3) Repetitive (Note 2) EAS EAR 180 mJ 8.
5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
0 V/ns TO-220 65 W Power Dissipation TO-220F/TO-220F1 TO-220F2 PD 24 W TO-251/TO-252 43 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress r...


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