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2N828

Part Number	2N828
Manufacturer	Motorola
Description	PNP germanium epitaxial mesa transistor
Published	Nov 8, 2018
Detailed Description	2N828 (GERMANIUM) CASE 22 (TO·1S) Collector connected to cas. PNP germanium epitaxial mesa transistor for highspeed sw...
Datasheet	2N828 PDF File

Overview

2N828 (GERMANIUM) CASE 22 (TO·1S) Collector connected to cas.
PNP germanium epitaxial mesa transistor for highspeed switching applications.
MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Current Total Device Dissipation @ TA =25°C Derate above 25°C Total Device Dissiopation @ TC =25°C .
Derate above 25 C Operating and Storage Junction Temperature Range Symbol VCEO VCB VEB IC PD PD TJ , Tstg Value 15 15 2.
5 200 150 2.
0 300 4.
0 -65 to +100 Unit Vdc Vdc Vdc mAdc mW mWjOC mW mW;oC °c FIGURE 1 - SWITCHING TIME TEST CIRCUIT INPUT WAVEFORM '--1----r-+,m ~5.
4V PULSE VOLTS INTERNAL RESISTANCE 2000 UK 2800 TYPE RSAMPLING RESISTOR 200 NOTE, 1•• ==_lmA _3Ydc (APPROX) (ADJUST FOR Ie == _IOmA) I.
, == +0.
25mA I" == -IOmA USE TEKTRON IX TYPE RPLUG·IN :F--4.
4Y INPUT WAVEFORM FIGURE 2 - CHARGE STORAGE TIME TEST CIRCUIT PULSE VOLTS INTERNAL RESISTANCE 500 3500 TYPE RSAMPLING RESISTOR 9800 2011 -IOVdc (APPROX) NO...

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