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2N834

Motorola
Part Number 2N834
Manufacturer Motorola
Description NPN silicon epitaxial transistors
Published Nov 8, 2018
Detailed Description 8342N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications. CASE 22 \ (TO·18) Collec...
Datasheet PDF File 2N834 PDF File

2N834
2N834

Overview
8342N (SILICON) 2N835 NPN silicon epitaxial transistors for high- speed switching applications.
CASE 22 \ (TO·18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Peak Total Device DisSipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Total Device Dissipation @ TC = 100°C Derate above 100°C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB Ie PD PD PD TJ,Tstg 2N834 2N835 30 40 5.
0 200 0.
3 2.
0 20 25 3.
0 1.
0 6.
67 0.
5 6.
67 -65 to +175 Unit Vdc Vdc Vdc mAdc Watt mwflC Watt mW/oC Watt mWflC °c FIGURE 1 - TURN·ON AND TURN·OFF TIME MEASUREMENT CIRCUIT FIGURE 2 - CHARGE STORAGE TIME CONSTANT MEASUREMENT CIRCUIT .
'Oo 50 +10Vde '50 82.
,< 0.
11&' .
'_.
_,.
.
.
.
I\IIr.
.
e--;-'VV~1-O .
' - - - r = : tt.
n ,Y.
.
=+18Vdc V,.
=-19Vdr: ·+l1Y NOTE.
ALL SWlreHINa TIMES MWUR£l) WITH LI/IIATfION MOOU 420 SWlreHINC TIME...


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