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Part Number
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K2925 |
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Manufacturer
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Hitachi |
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Description
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Silicon N-Channel MOSFET |
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Published
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Nov 30, 2018 |
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Detailed Description
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2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.060 Ω ty...
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Datasheet
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K2925
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Overview
2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.
060 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source
Outline
ADE-208-549C (Z) 4th.
Edition Jun 1998
DPAK–2
44
D G
S
12 3
12 3
1.
Gate 2.
Drain 3.
Source 4.
Drain
2SK2925(L),2SK2925(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation
VDSS VGSS ID I Note1
D(pulse)
I DR I Note3
AP
E Note3 AR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note:
1.
PW ≤ ...
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