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K2936

Hitachi Semiconductor
Part Number K2936
Manufacturer Hitachi Semiconductor
Description 2SK2936
Published Jan 16, 2012
Detailed Description www.DataSheet.co.kr 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B (Z) 3rd. Edition Jun 199...
Datasheet PDF File K2936 PDF File

K2936
K2936

Overview
www.
DataSheet.
co.
kr 2SK2936 Silicon N Channel MOS FET High Speed Power Switching ADE-208-559B (Z) 3rd.
Edition Jun 1998 Features • Low on-resistance R DS =0.
010 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220CFM D G 1 2 3 S 1.
Gate 2.
Drain 3.
Source Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 2SK2936 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 45 180 45 45 173 35 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50Ω 2 Datasheet pdf - http://www.
DataSheet4U.
net/ www.
DataSheet.
co.
kr 2SK2936 Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.
5 — — 24 — — — — — — — — — Typ — — — — — 0.
010 0.
015 40 2200 1050 320 25 200 320 240 0.
95 60 Max — — ±10 10 2.
5 0.
013 0.
025 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 45A, VGS = 0 I F = 45A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 20A, VGS = 10VNote4 I D = 20A, VGS = 4V Note4 I D = 20A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 20A, VGS = 10V VGS = 10V, ID = 20A RL = 1.
5Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse rec...


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