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K2930

Hitachi Semiconductor
Part Number K2930
Manufacturer Hitachi Semiconductor
Description 2SK2930
Published Sep 1, 2014
Detailed Description 2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features • Low on-r...
Datasheet PDF File K2930 PDF File

K2930
K2930

Overview
2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th.
Edition Jun 1998 Features • Low on-resistance R DS =0.
020 Ω typ.
• High speed switching • 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1.
Gate 2.
Drain(Flange 3.
Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1.
PW ≤ 10 µs, duty cycle ≤ 1 % 2.
Value at Tc = 25°C 3.
Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2930 Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.
5 — — 14 — — — — — — — — — Typ — — — — — 0.
020 0.
032 23 1100 540 200 15 180 175 195 0.
95 40 Max — — ±10 10 2.
5 0.
026 0.
050 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 35A, VGS = 0 I F = 35A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 15A, VGS = 10VNote4 I D = 15A, VGS = 4V Note4 I D = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 15A, VGS = 10V RL = 2Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4.
Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK2930 Main Characteristics Power vs.
Tempe...


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