Part Number
|
SSM3J356R |
Manufacturer
|
Toshiba |
Description
|
Silicon P-Channel MOSFET |
Published
|
May 20, 2019 |
Detailed Description
|
MOSFETs Silicon P-Channel MOS (U-MOS�)
SSM3J356R
1. Applications
• Power Management Switches
2. Features
(1) AEC-Q101 qu...
|
Datasheet
|
SSM3J356R
|
Overview
MOSFETs Silicon P-Channel MOS (U-MOS�)
SSM3J356R
1.
Applications
• Power Management Switches
2.
Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage.
(3) Low drain-source on-resistance
: RDS(ON) = 400 mΩ (max) (@VGS = -4.
0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V)
3.
Packaging and Pin Assignment
SSM3J356R
1: Gate 2: Source 3: Drain
SOT-23F
4.
Orderable part number
Orderable part number
AEC-Q101
Note
SSM3J356R,LF SSM3J356R,LXGF SSM3J356R,LXHF
� YES YES
(Note 1)
General Use Unintended Use Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
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1
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