PDTA123JM

PDTA123J : 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number R1 PDTA143XQA 4.7 k PDTA123JQA 2.2 k PDTA143ZQA 4.7 k PDTA114YQA 10 k R2 10 k 47 k 47 k 47 k Package Nexperia DFN1010D-3 (SOT1215) NPN complement PDTC143XQA PDTC123JQA PDTC143ZQA PDTC114YQA 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspec.

PDTA123J : PDTA123J series QUICK REFERENCE DATA SYMBOL VCEO IO R1 R2 PARAMETER collector-emitter voltage output current (DC) bias resistor bias resistor TYP. − − 2.2 47 MAX. −50 −100 − − UNIT V mA kΩ kΩ PNP resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER PHILIPS PDTA123JE PDTA123JEF PDTA123JK PDTA123JM PDTA123JS PDTA123JT PDTA123JU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 EIAJ SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 27 27 43 DG TA123J *23(1) *43(1) PDTC123JE PDTC123JEF PDTC123JK PDTC123JM PDTC123JS PDTC123JT PDTC123JU MARK.

PDTA123JE : PNP resistor-equipped transistor in a SC-75 (SOT416) plastic package. NPN complement: PDTC123JE. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Top view Fig.1 Simplified outline (SC-75; SOT416) and symbol. MARKING TYPE NUMBER 3 2 MGA893 - 1 1 MARKING CODE 27 PDTA123JE Equivalent inverter symbol. QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −10 mA; VCE = −5 V CONDITIONS open base − − − − 100 1.54 17 MIN. − − − − − 2.2 21 TYP. MAX. −50 −100 −100 150 − 2.86 26 kΩ UNIT .

PDTA123JEF : PNP resistor-equipped transistor in an SC-89 (SOT490) plastic package. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.2 Top view Fig.1 Simplified outline (SC-89; SOT490) and symbol. MARKING TYPE NUMBER PDTA123JEF 2 MGA893 - 1 1 3 MARKING CODE 27 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Refer to SC-89 (SOT490) standard mounting conditions. 1999 Apr 20 2 output current (DC) peak collector current total power dissipatio.

PDTA123JMB : PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC123JMB. 1.2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.37 mm 1.3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.4 Quick reference data Table 1. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter v.

PDTA123JQA : 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type number R1 PDTA143XQA 4.7 k PDTA123JQA 2.2 k PDTA143ZQA 4.7 k PDTA114YQA 10 k R2 10 k 47 k 47 k 47 k Package Nexperia DFN1010D-3 (SOT1215) NPN complement PDTC143XQA PDTC123JQA PDTC143ZQA PDTC114YQA 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduced pick and place costs  Low package height of 0.37 mm  AEC-Q101 qualified  Suitable for Automatic Optical Inspec.

PDTA123JT : PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC123ET. PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 PDTA123JT handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER PDTA123JT 2 1 3 MARKING CODE(1) ∗23 Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. Fig.2 Equivalent inverter symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1. Re.

PDTA123JU : PNP Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP PDTA123JE SOT416 PDTA123JM SOT883 PDTA123JT SOT23 PDTA123JU SOT323 JEITA SC-75 SC-101 SC-70 JEDEC NPN complement - PDTC123JE - PDTC123JM TO-236AB PDTC123JT - PDTC123JU Package configuration ultra small leadless ultra small small very small 1.2 Features and benefits  100 mA output current capability  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place costs  AEC-Q101 qualified 1.3 Applications  Digital application in automotive and industrial segments  Control of IC.