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PDTA123JE

NXP
Part Number PDTA123JE
Manufacturer NXP
Description PNP resistor-equipped transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification Supersedes ...
Datasheet PDF File PDTA123JE PDF File

PDTA123JE
PDTA123JE

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 1998 Nov 25 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ.
2.
2 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space.
1 2 handbook, halfpage PDTA123JE 3 R1 1 R2 3 2 MAM345 APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION PNP resistor-equipped transistor in a SC-75 (SOT416) plastic package.
NPN complement: PDTC123JE.
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.
2 Top view Fig.
1 Simplified outline (SC-75; SOT416) and symbol.
MARKING TYPE NUMBER 3 2 MGA893 - 1 1 MARKING CODE 27 PDTA123JE Equivalent inverter symbol.
QUICK REFERENCE DATA SYMBOL VCEO IO ICM Ptot hFE R1 R2 ------R1 PARAMETER collector-emitter voltage output current (DC) peak collector current total power dissipation DC current gain input resistor resistor ratio Tamb ≤ 25 °C IC = −10 mA; VCE = −5 V CONDITIONS open base − − − − 100 1.
54 17 MIN.
− − − − − 2.
2 21 TYP.
MAX.
−50 −100 −100 150 − 2.
86 26 kΩ UNIT V mA mA mW 1998 Nov 25 2 Philips Semiconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collecto...


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