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PDTA123JT

NXP
Part Number PDTA123JT
Manufacturer NXP
Description PNP resistor-equipped transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specificat...
Datasheet PDF File PDTA123JT PDF File

PDTA123JT
PDTA123JT

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor Product specification 1999 May 27 Philips Semiconductors Product specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors (typ 2.
2 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space.
APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package.
NPN complement: PDTC123ET.
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output MGA893 - 1 PDTA123JT handbook, 4 columns 3 3 R1 1 R2 2 1 2 MAM100 Top view Fig.
1 Simplified outline (SOT23) and symbol.
MARKING TYPE NUMBER PDTA123JT 2 1 3 MARKING CODE(1) ∗23 Note 1.
∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
Fig.
2 Equivalent inverter symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Refer to SOT23 standard mounting conditions.
1999 May 27 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 +5 −12 −100 −100 250 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector − − − MIN.
MAX.
−50 −50 −10 V V V UNIT Philips Semiconductors Product specification PNP resistor-equipped transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SOT23 standard mounting conditions.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current ...


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