DatasheetsPDF.com

PDTA123JMB

nexperia
Part Number PDTA123JMB
Manufacturer nexperia
Description PNP resistor-equipped transistor
Published Mar 4, 2019
Detailed Description SOT883B PDTA123JMB PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Rev. 1 — 16 May 2012 Product data sheet...
Datasheet PDF File PDTA123JMB PDF File

PDTA123JMB
PDTA123JMB


Overview
SOT883B PDTA123JMB PNP resistor-equipped transistor; R1 = 2.
2 kΩ, R2 = 47 kΩ Rev.
1 — 16 May 2012 Product data sheet 1.
Product profile 1.
1 General description PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
NPN complement: PDTC123JMB.
1.
2 Features and benefits  100 mA output current capability  Reduces component count  Built-in bias resistors  Reduces pick and place costs  Simplifies circuit design  AEC-Q101 qualified  Leadless ultra small SMD plastic package  Low package height of 0.
37 mm 1.
3 Applications  Low-current peripheral driver  Control of IC inputs  Replaces general-purpose transistors in digital applications  Mobile applications 1.
4 Quick reference data Table 1.
Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio Conditions open base Tamb = 25 °C M...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)