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PDTA123JEF

NXP
Part Number PDTA123JEF
Manufacturer NXP
Description PNP resistor-equipped transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor Preliminary specification 1999 A...
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PDTA123JEF
PDTA123JEF

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor Preliminary specification 1999 Apr 20 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ.
2.
2 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space.
1 2 MAM413 PDTA123JEF handbook, halfpage 3 R1 1 R2 3 2 APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION PNP resistor-equipped transistor in an SC-89 (SOT490) plastic package.
PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+) collector/output Fig.
2 Top view Fig.
1 Simplified outline (SC-89; SOT490) and symbol.
MARKING TYPE NUMBER PDTA123JEF 2 MGA893 - 1 1 3 MARKING CODE 27 Equivalent inverter symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Refer to SC-89 (SOT490) standard mounting conditions.
1999 Apr 20 2 output current (DC) peak collector current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 − − − − − −65 − −65 5 −12 −100 −100 250 +150 150 +150 V V mA mA mW °C °C °C CONDITIONS open emitter open base open collector − − − MIN.
MAX.
−50 −50 −10 V V V UNIT Philips Semiconductors Preliminary specification PNP resistor-equipped transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation...


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