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HGTG30N60A4

SMPS IGBT

Description

IGBT - SMPS 600 V, 60 A HGTG30N60A4 Description The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for...


ON Semiconductor

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